52^nd International School & Conference on the Physics of Semiconductors

Tuesday Poster Session A

TuPA1 - J. Rogoża, B. Furtak, J. Binder, A.K. Dąbrowska, R. Stępniewski, A. Wysmołek
Epitaxial Boron Nitride Processing and Conductivity

TuPA2 - M. Tokarczyk, A.K. Dąbrowska, G. Kowalski, R. Bożek, J. Iwański, J. Binder, R. Stępniewski, A. Wysmołek
Direct MOVPE growth of high-quality h-BN on the wafer-scale: the role of substrate off-cut

TuPA3 - J. Iwański, M. Tokarczyk, K.P. Korona, P. Tatarczak, J. Pawłowski, A.K. Dąbrowska, J. Binder, R. Stępniewski, A. Wysmołek
Manipulating hBN Bandgap Properties With Aluminum

TuPA4 - A. Szczerba, J. Kucharek, J. Pawłowski, T. Taniguchi, K. Watanabe, W. Pacuski
MBE growth of CdTe on hBN

TuPA5 - B. Furtak, A. Wysmołek, J. Binder
Carbon-enriched Epitaxial Boron Nitride Layers as Contact Material for h-BN Devices

TuPA6 - M.S. Alam, D. Wigger, M. Gawełczyk, P. Machnikowski
Determining Strain Components in a Diamond Waveguide from Asymmetric ODMR Spectra of NV- Center Ensembles

TuPA7 - M. Sarwar, R. Ratajczak, E. Guziewicz
Post-implantation Defect Accumulation in Crystal Lattice of β-Ga2O3 Implanted with Yb ion

TuPA8 - R. Ratajczak, M. Sarwar, C. Mieszczynski, P. Jozwik, W. Wozniak, U. Kentsch, R. Heller, E. Guziewicz
The structural properties anisotropy of beta-Ga2O3 implanted with Yb

TuPA9 - A. Wołoś, J. Sitnicka, R. Grasset, M. Konczykowski
Electron Paramagnetic Resonance of Beta-Gallium Oxide Modified by High-Energy Electron Irradiation

TuPA10 - I.N. Demchenko, Y. Syryanyy, A. Shokri, Y. Melikhov, M. Chernyshova
Effects of Si/N Ion Implantation on Defect formation and Doping of Gallium Oxide

TuPA11 - J.K. Jadoon, A. Adhikari, A. Lysak, A. Wierzbicka, W. Lisowski, M. Stachowicz, A. Kozanecki, E. Przezdzieck
PA-MBE Grown CdMgO:Eu Ternary Alloy on m- and c-Oriented Al2O3 Substrates

TuPA12 - M. Stachowicz, J.A. Mathew, J.M. Sajkowski, R. Jakiela, Y. Zhydachevskyy, S. Magalhaes, E. Alves, A. Kozanecki
MBE growth of wide band gap wurtzite MgZnO superlattices doped with Eu for effective visible emission

TuPA13 - D. Jarosz, M. Stachowicz, P. Krzemiński, M. Ruszala, A. Juś, P. Śliż, D. Płoch, M. Marchewka
Initial optimization of the growth conditions of GaAs homo-epitaxial layers after cleaning and restarting the MBE reactor.

TuPA14 - K. Olszewski, M. Sobanska, A. Wierzbicka, Z.R. Zytkiewicz
Geometrical selection during MBE growth of nanowires on polycrystalline substrates

TuPA15 - I. Perlikowski, E. Zielony, A. Lysak, E. Przeździecka
Insights into Raman spectra and doping concentration profiles of Eu-doped {ZnCdO/ZnO} superlattices

TuPA16 - A. Adhikari, Z. Adamus, M. Pawlak, A. Lysak, E. Przezdziecka
Electrical and thermal transport properties of CdO and CdMgO alloys grown using plasma-assisted MBE technique

TuPA17 - A. Lysak, E. Przeździecka, A. Wierzbicka, A. Reszka, M. Stachowicz, R. Jakiela, P. Dłużewski, A. Adhikari, A. Kozanecki
Characterization of MBE grown {Zn(Mg)O/ZnCdO}m superlattices doped in-situ with Eu

TuPA18 - R. Szymon, E. Zielony, M.A. Pietrzyk, A. Lysak
n-ZnO/ZnCdO/p-Si and n-ZnCdO/ZnO/p-Si diodes: studies on the influence of the junction interlayer on electrical properties and structural defects

TuPA19 - R. Szymon, E. Zielony, M. Sobanska, A. Wierzbicka, A. Reszka, S. Gieraltowska, Z.R. Zytkiewicz
An insight into the optical properties of GaN nanowires with Al2O3 and HfO2 shells

TuPA20 - O. Volnianska, S. Mishra, E. Guziewicz
Effect of strain and surface proximity on the acceptor grouping in ZnO:N

TuPA21 - A. Hassan, A.A. Khan, M. Azam, U. Farooq, M. Zubair, Y. Cao
Tailoring of the optical and electrical characteristics of ZnO: Ga heterostructures by a metallic buffer layer

TuPA22 - Y.K. Edathumkandy, K. Gas, D. Sztenkiel, K. Das, D. Hommel, H. Przybylińska, M. Sawicki
Ferromagnetic Resonance Studies of (Ga,Mn)N

TuPA23 - M. Chlipała, H. Turski, K. Nowakowski-Szudlarek, A. Feduniewicz-Żmuda, C. Skierbiszewski
Impact of current flow direction on the distribution of carriers in multiple, color-coded InGaN quantum wells

TuPA24 - M. Siekacz, M. Żak, K. Gołyga, M. Kryśko, A. Feduniewicz-Żmuda, H. Turski, C. Skierbiszewski, G. Muziol
Extreme InGaN growth conditions by plasma assisted molecular beam epitaxy

TuPA25 - A. Feduniewicz-Żmuda, M. Siekacz, N. Fiuczek, O. Gołyga, M. Sawicka, K. Sobczak, C. Skierbiszewski
Doping inhomogeneity at the nanoscale in GaN:Si studied by electrochemical etching

TuPA26 - M. Guziewicz, E.B. Moż d ż ynska, P. Ciepielewski, E. Dumiszewska, B. Stań czyk, M. Wzorek, K. Kościewicz
Visible luminescence of B GaN based structures: towards defects related LEDs

TuPA27 - B.J. Kowalski, A. Reszka, M. Klepka, A. Wolska, M. Sobanska, Z.R. Zytkiewicz
Modification of luminescence of the nitride nanowires by chemical treatment of their surface

TuPA28 - A. Wierzbicka, R. Szymon, E. Zielony, A. Reszka, M. Sobanska, S. Gieraltowska, P. Sybilski, Z.R. Zytkiewicz
Strain relation in GaN nanowires with HfO2 and Al2O3 shells examined by X-ray diffraction and Raman spectroscopy techniques

TuPA29 - A. Wierzbicka, E. Przezdziecka, I. Perlikowski, E. Zielony
Investigation of strain relation and lattice dynamics in {CdO/MgO} superlattices grown by plasma-assisted molecular beam epitaxy

TuPA30 - J. Ziembicki, P. Scharoch, M.P. Polak, M. Wiśniewski, R. Kudrawiec
Band parameters of group IV semiconductors in wurtzite structure